Status report on ASTM E-42 Committee on surface analysisHOLLOWAY, P. H.Journal of vacuum science and technology. A, vacuum, surfaces, and films. 1983, Vol 1, Num 3, pp 1570-1573Article

Progress report on the american society for testing and materials. ASTM E-42 committee in surface analysisHOLLOWAY, P. H.Surface and interface analysis. 1983, Vol 5, Num 6, pp 264-265, issn 0142-2421Article

Regrowth of a GaAs layer for n-GaAs ohmic contactsBAOQI LI; HOLLOWAY, P. H.Journal of applied physics. 1992, Vol 71, Num 9, pp 4385-4389, issn 0021-8979Article

Electrodeposition of black chrome selective solar absorber coatings with improved thermal stabilitySHANKER, K; HOLLOWAY, P. H.Thin solid films. 1985, Vol 127, Num 3-4, pp 181-189, issn 0040-6090Article

Effects of Solution Processing on the Photovoltaic Response of Poly(n-vinyl carbazole) FilmsCHUNG, P. S; HOLLOWAY, P. H.Journal of applied polymer science (Print). 2010, Vol 117, Num 1, pp 479-485, issn 0021-8995, 7 p.Article

Optical constants of ZnSe in the far infraredDENEUVILLE, A; TANNER, D; HOLLOWAY, P. H et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 8, pp 6544-6550, issn 0163-1829, 7 p.Article

Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contactsWANG, Y.-X; HOLLOWAY, P. H.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1984, Vol 2, Num 4, pp 613-619, issn 0734-211XArticle

Quantitative surface analysis of layered materialsHOLLOWAY, P. H; BUSSING, T. D.Surface and interface analysis. 1992, Vol 18, Num 4, pp 251-256, issn 0142-2421Article

Chemical reactions at metal/compound semiconductor interfaces : Au and GaAsHOLLOWAY, P. H; MUELLER, C. H.Thin solid films. 1992, Vol 221, Num 1-2, pp 254-261, issn 0040-6090Article

Laser-target interactions during pulsed laser deposition of superconducting thin filmsBHATTACHARYA, D; SINGH, R. K; HOLLOWAY, P. H et al.Journal of applied physics. 1991, Vol 70, Num 10, pp 5433-5439, issn 0021-8979, 1Article

Deconvolution of concentration depth profiles from angle resolved x-ray photoelectron spectroscopy dataBUSSING, T. D; HOLLOWAY, P. H.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 5, pp 1973-1981, issn 0734-2101Article

Ohmic contacts to ZnSe-based materialsFIJOL, J. F; HOLLOWAY, P. H.Critical reviews in solid state and materials sciences. 1996, Vol 21, Num 2, pp 77-128, issn 1040-8436Article

Indium ohmic contacts to n-ZnSeWANG, Y. X; HOLLOWAY, P. H.Vacuum. 1992, Vol 43, Num 11, pp 1149-1151, issn 0042-207XConference Paper

Photoluminescence of Solution Processed Poly n-Vinyl Carbazole FilmsCHUNG, P. S; HOLLOWAY, P. H.Journal of applied polymer science (Print). 2009, Vol 114, Num 1, pp 1-9, issn 0021-8995, 9 p.Article

Characterization of shallow implants with SIMS using electron-beam-assisted oxygen bombardment with oxygen backfillPUGA-LAMBERS, M; HOLLOWAY, P. H.Surface and interface analysis. 1998, Vol 26, Num 11, pp 851-860, issn 0142-2421Article

X-ray spectrometry and photoelectron spectroscopy applied to the study of layered samples: SiO₂ and SiO_x films on InSbPACKWOOD, R. H; REMOND, G; HOLLOWAY, P. H et al.Surface and interface analysis. 1988, Vol 11, Num 3, pp 127-133, issn 0142-2421Article

Sputter deposition and electroluminescence of Zn₂GeO₄:MnLEWIS, J. S; HOLLOWAY, P. H.Journal of the Electrochemical Society. 2000, Vol 147, Num 8, pp 3148-3150, issn 0013-4651Article

Ohmic contacts to GaAs epitaxial layersKIM, T.-J; HOLLOWAY, P. H.Critical reviews in solid state and materials sciences. 1997, Vol 22, Num 3, pp 239-273, issn 1040-8436Article

Surface passivation of GaAs with P₂S₅-containing solutionsYUN WANG; DARICI, Y; HOLLOWAY, P. H et al.Journal of applied physics. 1992, Vol 71, Num 6, pp 2746-2756, issn 0021-8979Article

The structure, device physics, and material properties of thin film electroluminescent displaysRACK, P. D; HOLLOWAY, P. H.Materials science & engineering. R, Reports. 1998, Vol 21, Num 4, pp 171-219, issn 0927-796XArticle

Correlated scanning Auger and X-ray photoelectron spectroscopic investigations of silicon carbide powdersCONTARINI, S; LAMBERS, E; HOLLOWAY, P. H et al.Applied surface science. 1992, Vol 62, Num 3, pp 181-188, issn 0169-4332Article

Electric field modulation of ZnO film conductance in ZnO-based FET structuresKWON, Y; LI, Y; HEO, Y. W et al.Proceedings - Electrochemical Society. 2003, pp 68-72, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Study of Cd-free buffer layers using In_x(OH, S)_y on CIGS solar cellsHUANG, C. H; LI, Sheng S; HOLLOWAY, P. H et al.Solar energy materials and solar cells. 2001, Vol 69, Num 2, pp 131-137, issn 0927-0248Article

Electron-stimulated oxidation of silicon carbideMCDANIEL, G. Y; FENSTERMAKER, S. T; WALKER, D. E et al.Surface science. 2000, Vol 445, Num 2-3, pp 159-166, issn 0039-6028Article

Photoluminescence and thermal quenching of bound excitons in (BaS)_1-x(SrTe)_xLEWIS, J. S; RACK, P. D; HOLLOWAY, P. H et al.Journal of crystal growth. 1998, Vol 184-85, pp 1175-1179, issn 0022-0248Conference Paper